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| SGT8810 Elektronische Bauelemente 7A, 20V,RDS(ON)20m N-Channel Enhancement Mode Power Mos.FET Description The SGT8100 used advanced trench technology to provide excellent on-resistance which is an extremely efficient and cost-effective device. It also provides low gate charge and operates with gate voltages as low as 1.8 V. Suitable usage in load switch and/or PWM applications. This device is ESD protected. Features * ESD Rating: 2 kV HBM * Low on-resistance * Capable of 1.8V gate drive D1 D2 REF. A A1 b c Millimeter Min. 0.05 0.19 0.09 2.90 Max. 1.20 0.15 0.30 0.20 3.10 REF. E E1 e L S Millimeter Min. Max. 6.20 4.30 0.45 0 6.60 4.50 0.75 8 G1 G2 0.65 BSC S1 S2 D Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 20 8 7.0 5.7 30 1 0.008 Unit V V A A A W W/ C o o 3 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Ratings 125 o Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SGT8810 Elektronische Bauelemente 7A, 20V,RDS(ON)20 m N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Resistance Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C ) Drain-Source Leakage Current(Tj=55 C) Static Drain-Source On-Resistance 2 o o o Symbol BVDSS VGS(th) Min. 20 0.4 _ _ _ Typ. _ _ Max. _ Unit V V [ Test Condition VGS=0V, ID=250uA VDS=VGS,ID=250uA 1.0 _ 10 Rg IGSS IDSS 1.5 _ _ _ _ _ _ f=1.0MHz VGS= 8V VDS=20V,VGS=0 VDS=16V,VGS=0 VGS=4.5V, ID= 7A uA uA uA 1 5 20 24 32 _ _ _ _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ m VGS=2.5V, ID=5.5A VGS=1.8V, ID=5A ID=7 A VDS=10V VGS= 4.5V Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance _ _ _ _ _ _ _ _ _ _ 16 0.8 3.8 6.2 12.7 51.7 16 1160 187 146 29 nC _ _ nS _ _ _ _ _ VDS=10V VGS= 5 V RG= 3 RL= 1.35 pF VGS=0V VDS=10V f=1.0MHz _ _ S VDS= 5V, ID=7A Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time 2 Symbol VSD Trr Qrr Min. _ _ _ Typ. _ Max. 1.0 _ _ Unit V nS nC A Test Condition IS=1A,VGS=0V IS=7A,VGS=0V dl/dt=100A/us 17.7 6.7 _ Reverse Recovery Charge Continuous Source Current(Body Diode) IS _ 2.5 Notes: 1. Pulse width limited by Max. junction temperature. 300us, dutycycleO2%. 2.Pulse widthO 3.Surface mounted on 1 in 2 copper pad of FR4 board. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SGT8810 Elektronische Bauelemente 7A, 20V,RDS(ON)20m N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Transfer Characteristics Fig 3. On-Resistance vs. Drain Current and Gate Voltage 10 Fig 4. On-Resistance vs. Junction Temperature 1 0.1 0.1 0.01 0.01 0.001 0.001 0.0001 0.0001 0.00001 Fig 5. On-Resistance vs. Gate-Source Voltage http://www.SeCoSGmbH.com/ Fig 6. Body Diode Characteristics Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SGT8810 Elektronische Bauelemente 7A, 20V,RDS(ON)20m N-Channel Enhancement Mode Power Mos.FET Fig 7. Maximum Safe Operating Area Fig 8. Single Pulse Power Rating Junction-to-Ambient v.s. Junction Temperature Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 125 : /W Fig 11. Normalized Maximum Transient Thermal Impedance Curve http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
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